Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures
Research Highlights
Design of InGaN-ZnSnN2 Quantum Wells for High-efficiency Amber Light Emitting Diodes
M. R. Karim, H. P. Zha
Nitride Semiconductor’s Family Expanded
K. Kash, H. Zhao, W. Lambrecht
Training Graduate Students in the Art of MOCVD
W. Lambrecht, K.Kash, H. Zhao
Band Alignment of III-N, ZnO and II-IV-N2 Semiconductors from the Electron Affinity Rule
S. Lyu, W. R. L. Lambrecht
First-principles Calculations of Elastic and Piezoelectric Constants and Spontaneous Polarization in Cd-IV-N2 Compounds
S. Lyu, W. R. L. Lambrecht
Electronic Band Structure of Mg-IV-N2 Compounds in the Quasiparticle-self-Consistent GW Approximation
A. P. Jaroenjittichai, W. R. L. Lambrecht
Native Point Defects and Doping in ZnGeN2
D. Skachkov, A. P. Jaroenjittichai, L. Y. Huang, W. R. L. Lambrecht
Quasiparticle Self-consistent GW Energy Band Calculations for Ge3N4 Phases
B. H. D. Jayatunga, W. R. L. Lambrecht
First-principles Calculations of Phonons and Raman and Infrared Spectra in Cd-IV-N2 compounds
S. Lyu, W. R. L. Lambrecht
Disorder Effects on the Band Structure of ZnGeN2: Role of Exchange Defects
D. Skachkov, P. C. Quayle, K. Kash, W. R. L. Lambrecht
Metal-Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire
M. R. Karim, B. H. D. Jayatunga, Z. X. Feng, K. Kash, H. P. Zhao
Raman Study of the Vibrational Modes in ZnGeN2 (0001)
E. W. Blanton, M. Hagemann, K. L. He, J. Shan, W. R. L. Lambrecht, K. Kash
Calculated Phonon Modes, Infrared, and Raman Spectra in ZnGeGa2N4
A. Ratnaparkhe, W. R. L. Lambrecht
Study of Intersubband Transitions in GaN-ZnGeN2 Coupled Quantum Wells
L. Han, C. Lieberman, H. P. Zhao
Candidates for p-type Doping of ZnGeN2
D. Skachkov, W. R. L. Lambrecht
Quasiparticle Self-consistent GW Electronic Band Structure of Cd-IV-N2 Compounds
S. Lyu, W. R. L. Lambrecht
Vibrational Modes in the Pmc21 Structure of ZnGeN2
M. Hagemann, C. Bhandari, W. R. L. Lambrecht
Metal-Organic Chemical Vapor Deposition of ZnGeGa2N4
B. H. D. Jayatunga, M. R. Karim, R. A. Lalk, O. Ohanaka, W. R. L. Lambrecht, H. P. Zhao, K. Kash
Deep Level Defects and Cation Sublattice Disorder in ZnGeN2
M. S. Haseman, M. R. Karim, D. Ramdin, B. A. Noesges, E. Feinberg, B. H. D. Jayatunga, W. R. L. Lambrecht, M. L. Zhu, J. Hwang, K. Kash, H. P. Zhao, L. J. Brillson
Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters
M. R. Karim, B. H. D. Jayatunga, K. T. Zhang, M. L. Zhu, J. Hwang, K. Kash, H. P. Zhao
Experimental Determination of the Valence Band Offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN
M. R. Karim, B. A. Noesges, B. H. D. Jayatunga, M. L. Zhu, J. Hwang, W. R. L. Lambrecht, L. J. Brillson, K. Kash, H. P. Zhao
Effects of Cation Stoichiometry on Surface Morphology and Crystallinity of ZnGeN2 Films Grown on GaN by Metalorganic Chemical Vapor Deposition
M. R. Karim, B. H. D. Jayatunga, M. L. Zhu, R. A. Lalk, O. Licata, B. Mazumder, J. Hwang, K. Kash, H. P. Zhao
Band Gaps, Band-Offsets, Disorder, Stability Region, and Point Defects in II-IV-N-2 Semiconductors
S. Lyu, D. Skachkov, K. Kash, E. W. Blanton, W. R. L. Lambrecht
First-principles Calculations of Second-order Nonlinear Optical Coefficients in the Static Limit and Pockels Coefficients in III-N and II-IV-N-2 Compounds
S. Lyu, W. R. L. Lambrecht
Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2 Quantum Wells Light-Emitting Diodes in 2017 Conference on Lasers and Electro-Optics
J. Grgat, L. Han, H. P. Zhao, Ieee
First-principles Calculations of Phonon Derived Raman and Infrared Spectra in Be-IV-N2 Compounds
S. Lyu, Y. H. Liu, W. R. L. Lambrecht
Quasiparticle Self-consistent GW Electronic Band Structures of Be-IV-N2 Compounds
S. Lyu, W. R. L. Lambrecht
InGaN-ZnSnN2 Quantum Wells for High Efficiency Light Emitters Beyond Green in 2018 Conference on Lasers and Electro-Optics
M. R. Karim, H. P. Zhao, Ieee
Native Interstitial Defects in ZnGeN2
D. Skachkov, W. R. L. Lambrecht
Designs of Blue and Green Light-emitting Diodes based on Type-II InGaN-ZnGeN2 Quantum Wells
L. Han, K. Kash, H. P. Zhao
MOVCD of Complex Nitride Semiconductors
K. Kash, W. Lambrecht, H. Zhao