M. S. Haseman, M. R. Karim, D. Ramdin, B. A. Noesges, E. Feinberg, B. H. D. Jayatunga, W. R. L. Lambrecht, M. L. Zhu, J. Hwang, K. Kash, H. P. Zhao, L. J. Brillson

Vibrational Modes in the Pmc21 Structure of ZnGeN2

M. Hagemann, C. Bhandari, W. R. L. Lambrecht

First-principles Calculations of Phonons and Raman and Infrared Spectra in Cd-IV-N2 compounds

S. Lyu, W. R. L. Lambrecht

Disorder Effects on the Band Structure of ZnGeN2: Role of Exchange Defects

D. Skachkov, P. C. Quayle, K. Kash, W. R. L. Lambrecht

Metal-Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire

M. R. Karim, B. H. D. Jayatunga, Z. X. Feng, K. Kash, H. P. Zhao

Raman Study of the Vibrational Modes in ZnGeN2 (0001)

E. W. Blanton, M. Hagemann, K. L. He, J. Shan, W. R. L. Lambrecht, K. Kash

Calculated Phonon Modes, Infrared, and Raman Spectra in ZnGeGa2N4

A. Ratnaparkhe, W. R. L. Lambrecht

Study of Intersubband Transitions in GaN-ZnGeN2 Coupled Quantum Wells

L. Han, C. Lieberman, H. P. Zhao

Candidates for p-type Doping of ZnGeN2

D. Skachkov, W. R. L. Lambrecht

Quasiparticle Self-consistent GW Electronic Band Structure of Cd-IV-N2 Compounds

S. Lyu, W. R. L. Lambrecht

Metal-Organic Chemical Vapor Deposition of ZnGeGa2N4

B. H. D. Jayatunga, M. R. Karim, R. A. Lalk, O. Ohanaka, W. R. L. Lambrecht, H. P. Zhao, K. Kash

Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters

M. R. Karim, B. H. D. Jayatunga, K. T. Zhang, M. L. Zhu, J. Hwang, K. Kash, H. P. Zhao

Experimental Determination of the Valence Band Offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN

M. R. Karim, B. A. Noesges, B. H. D. Jayatunga, M. L. Zhu, J. Hwang, W. R. L. Lambrecht, L. J. Brillson, K. Kash, H. P. Zhao

Effects of Cation Stoichiometry on Surface Morphology and Crystallinity of ZnGeN2 Films Grown on GaN by Metalorganic Chemical Vapor Deposition

M. R. Karim, B. H. D. Jayatunga, M. L. Zhu, R. A. Lalk, O. Licata, B. Mazumder, J. Hwang, K. Kash, H. P. Zhao

Band Gaps, Band-Offsets, Disorder, Stability Region, and Point Defects in II-IV-N-2 Semiconductors

S. Lyu, D. Skachkov, K. Kash, E. W. Blanton, W. R. L. Lambrecht

First-principles Calculations of Second-order Nonlinear Optical Coefficients in the Static Limit and Pockels Coefficients in III-N and II-IV-N-2 Compounds

S. Lyu, W. R. L. Lambrecht

Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2 Quantum Wells Light-Emitting Diodes in 2017 Conference on Lasers and Electro-Optics

J. Grgat, L. Han, H. P. Zhao, Ieee

First-principles Calculations of Phonon Derived Raman and Infrared Spectra in Be-IV-N2 Compounds

S. Lyu, Y. H. Liu, W. R. L. Lambrecht

Quasiparticle Self-consistent GW Electronic Band Structures of Be-IV-N2 Compounds

S. Lyu, W. R. L. Lambrecht

InGaN-ZnSnN2 Quantum Wells for High Efficiency Light Emitters Beyond Green in 2018 Conference on Lasers and Electro-Optics

M. R. Karim, H. P. Zhao, Ieee

Native Interstitial Defects in ZnGeN2

D. Skachkov, W. R. L. Lambrecht

Designs of Blue and Green Light-emitting Diodes based on Type-II InGaN-ZnGeN2 Quantum Wells

L. Han, K. Kash, H. P. Zhao