Diamond's electronic properties are superior compared to currently used wide bandgap semiconductor materials. For electronic applications, diamond's high electron and hole mobility values enable high speed and high current operation, its low dielectric constant contributes to high frequency operation, its wide bandgap supports a high breakdown electric field and its high thermal conductivity supports high current operation. Diamond-based power and high frequency electronics will operate at power regimes not allowed by current semiconductor electronic devices. The impact is that the exceptional semiconductor properties of diamond will enable a new and more energy efficient class of higher-power, higher-voltage, and higher temperature electronic devices and will transform applications in transportation, manufacturing and energy sectors. To realize the potential of diamond for electronic diodes and transistors it is crucial that the electric field breakdown strength be large and that desired p-type and n-type doping profiles be achieved. The formation of doping profiles with desired variation in both the lateral and vertical directions are key to forming semiconductor junctions and controlling the electric field and breakdown voltages in diode and transistor devices. The goal of this project is to advance the scientific and engineering knowledge needed to form desired doping profiles for diamond electronic devices and to reduce the defects in diamond such that the full high voltage potential of diamond devices is achieved. An additional goal is to train graduate students and summer undergraduate student interns in diamond technology.