Nitride Semiconductor’s Family Expanded
In this project, the family was expanded to the II-IV- nitrides, in which the group III cations are replaced by combinations of group II and group IV atoms. These include several sustainable elements (Zn, Mg, Si, Sn). In the last year we tripled the number of compounds in this family for which accurate band structures, and a number of their fundamental properties, are predicted, 1,2 including some of the defect properties 3. This work aims to open new opportunities in band structure engineering; for example, new devices based on the large band offset between ZnGeN2 and GaN. 4A custom-designed metallorganic chemical vapor deposition (MOCVD) instrument for the growth of these materials and structures will soon be operational.
Related Project: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures