MOVCD of Complex Nitride Semiconductors
A unique, custom-designed research instrument for metal-organic chemical vapor deposition (MOCVD) is enabling the synthesis and study of complex nitride semiconductors, such as ZnGeN21, and alloys and heterostructures of these materials, alone and in combination with the binary nitrides (Al,Ga,In)N. 2 The binary nitrides are the basis for the current revolution in lighting technology. The possibility of expanding this family into novel device structures is a promising route toward overcoming some of the intrinsic limitations to the technology. This work on a new mixed compound (ZnGeN2)(GaN)2, and advancing the quality of MOCVD grown of ZnGeN2, are important steps toward realizing ultrathin heterostructures for use in novel devices. The MGI concept of repeated feedback between theoretical prediction and experimental realization has been crucial to the success of this effort. The optimization, fabrication and testing of specific device designs are the ultimate goal.
Related Project: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures