III-nitride Monolayers and Extreme Quantum Dots

Project Personnel

Zetian Mi

Principal Investigator

Parag Deotare

Michael McConney

Theodore Norris

Mackillo Kira

Funding Divisions

Division of Materials Research (DMR), Electrical, Communications and Cyber Systems (ECCS)

The project will serve the Materials Genome Initiative by creating a new family of nano-quantum materials (nQMs) that are confined down to a few atoms. In partnership with Sandia National Labs and Air Force Research Lab, the research will establish a nQM platform with unique quantum functionalities by using the most accurate quantum theory to design the quantum optoelectronic properties of nQMs. The nQMs will establish a unique controllably interacting semiconductor qubit platform needed for quantum information science application, including the possibility to control many-body states in two-dimensional (2D) materials. The project will develop ordered extreme quantum dots (XQD) arrays with state-of-the-art growth and metrology facilities. 

The research breakthroughs have the potential to dramatically enhance the efficiency AlGaN-based deep UV LEDs. This would create the much-needed technology for replacing conventional mercury lamps in water and air purification as well as sterilization, thereby eliminating mercury emissions and significantly reducing electricity consumption. The highly interdisciplinary nature and the appealing potential social impacts of the research will be leveraged to encourage underrepresented minorities and women in careers in science and engineering. At the same time, the research will provide opportunity to involve undergraduate students in frontier research. Through the popular “Saturday Morning Physics” public lecture series at the University of Michigan, the project will educate the broader public on quantum science and technology.

Publications

Ultrafast Exciton Dynamics in the Atomically Thin van der Waals Magnet CrSBr
C. Meineke, J. Schlosser, M. Zizlsperger, M. Liebich, N. Nilforoushan, K. Mosina, S. Terres, A. Chernikov, Z. Sofer, M. A. Huber, M. Florian, M. Kira, F. Dirnberger, and R. Huber
3/20/2024
Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity
Y. Wu, P. Zhou, Y. Xiao, K. Sun, D. Wang, P. Wang, and Z. Mi
10/24/2023
Epitaxial hexagonal boron nitride with high quantum efficiency
D. A. Laleyan, W. Lee, Y. Zhao, Y. Wu, P. Wang, J. Song, E. Kioupakis, and Z. Mi
5/1/2023
Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
Y. Wu, P. Wang, W. Lee, A. Aiello, P. Deotare, T. Norris, P. Bhattacharya, M. Kira, E. Kioupakis, and Z. Mi
4/17/2023
Scalable high-repetition-rate sub-half-cycle terahertz pulses from spatially indirect interband transitions
C. Meineke, M. Prager, J. Hayes, Q. Wen, L. Z. Kastner, D. Schuh, K. Fritsch, O. Pronin, M. Stein, F. Schäfer, S. Chatterjee, M. Kira, R. Huber, and D. Bougeard
5/23/2022
Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization
P. Wang, W. Lee, J. P. Corbett, W. H. Koll, N. M. Vu, D. A. Laleyan, Q. Wen, Y. Wu, A. Pandey, J. Gim, D. Wang, D. Y. Qiu, R. Hovden, M. Kira, J. T. Heron, J. A. Gupta, E. Kioupakis, and Z. Mi
4/21/2022

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Designing Materials to Revolutionize and Engineer our Future (DMREF)