Extreme Bandgap Semiconductors

Project Personnel

Debdeep Jena

Principal Investigator

Cornell University

Email

Huili (Grace) Xing

Cornell University

Email

Emmanouil Kioupakis

University of Michigan, Ann Arbor

Email

Eric Pop

Stanford University

Email

Funding Divisions

Division of Materials Research (DMR), Electrical, Communications and Cyber Systems (ECCS)

The last two decades witnessed revolutionary advances in electronics and photonics by moving from ~1 electron Volt gap semiconductors (Silicon, Gallium Arsenide) to ~3 electron Volt Gallium Nitride and Silicon Carbide. This enabled energy-efficient light emitting diodes as replacement of incandescent bulbs, high-voltage transistors that are cutting down wasted energy in electrical devices and machinery, and significantly expanded our fundamental knowledge of the materials science of semiconductors. Similar major advances are expected by aiming at extreme-bandgap semiconductors with energy gaps almost twice of that of the wide-bandgap semiconductors. In addition to the new science, such materials should enable advances in healthcare and monitoring by creating deep-ultraviolet light-emitting diodes and lasers, and by significantly improving the efficiency and capability of semiconductors for electrical power conversion. The proposed project will result in the training of graduate students in a fascinating emerging field of extreme bandgap semiconductor material science, with their many fundamental electronic, optical, and thermoelectric properties. In addition to expanding existing outreach programs, new activities with a special focus on high-school students and underrepresented groups via Research Experiences for Teachers programs and direct visits for in-class demonstrations are proposed. That the team is distributed between Cornell, Michigan, and Stanford with complementary expertise will be exploited by regular exchange of graduate students for experiments, as well as theory and modeling work, to foster a truly collaborative mindset in the project. The dissemination of research by journal publications, presentations at conferences, its inclusion in courses taught by the invsetigators, and online (e.g. nanoHub) will make possible the outreach of the research results to the widest possible audience.

Publications

Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties
J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto, L. van Deurzen, W. Turner, P. Fay, S. Mu, C. G. Van de Walle, A. Lal, H. (. Xing, and D. Jena
4/11/2022
Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction
T. Yu, J. Wright, G. Khalsa, B. Pamuk, C. S. Chang, Y. Matveyev, X. Wang, T. Schmitt, D. Feng, D. A. Muller, H. G. Xing, D. Jena, and V. N. Strocov
12/24/2021
Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1xN/GaN heterostructures
J. Casamento, H. Lee, C. S. Chang, M. F. Besser, T. Maeda, D. A. Muller, H. (. Xing, and D. Jena
9/1/2021
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S. Chae, K. Mengle, K. Bushick, J. Lee, N. Sanders, Z. Deng, Z. Mi, P. F. P. Poudeu, H. Paik, J. T. Heron, and E. Kioupakis
6/28/2021
Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures
Ł. Janicki, R. Chaudhuri, S. J. Bader, H. G. Xing, D. Jena, and R. Kudrawiec
2/18/2021
N-polar GaN/AlN resonant tunneling diodes
Y. Cho, J. Encomendero, S. Ho, H. G. Xing, and D. Jena
10/5/2020
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
S. J. Bader, H. Lee, R. Chaudhuri, S. Huang, A. Hickman, A. Molnar, H. G. Xing, D. Jena, H. W. Then, N. Chowdhury, and T. Palacios
10/1/2020
Bottom tunnel junction blue light-emitting field-effect transistors
S. Bharadwaj, K. Lee, K. Nomoto, A. Hickman, L. van Deurzen, V. Protasenko, H. (. Xing, and D. Jena
7/20/2020
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
W. Li, D. Saraswat, Y. Long, K. Nomoto, D. Jena, and H. G. Xing
5/11/2020
Optical properties of cubic boron arsenide
B. Song, K. Chen, K. Bushick, K. A. Mengle, F. Tian, G. A. G. U. Gamage, Z. Ren, E. Kioupakis, and G. Chen
4/6/2020
Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics
J. Encomendero, V. Protasenko, F. Rana, D. Jena, and H. G. Xing
3/19/2020
Multiferroic LuFeO3 on GaN by molecular-beam epitaxy
J. Casamento, M. E. Holtz, H. Paik, P. Dang, R. Steinhardt, H. (. Xing, D. G. Schlom, and D. Jena
3/9/2020
Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design
H. Turski, S. Bharadwaj, M. Siekacz, G. Muziol, M. Chlipala, M. Zak, M. Hajdel, K. Nowakowski-Szkudlarek, S. Stanczyk, H. Xing, D. Jena, and C. Skierbiszewski
2/16/2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes
S. Bharadwaj, J. Miller, K. Lee, J. Lederman, M. Siekacz, H. (. Xing, D. Jena, C. Skierbiszewski, and H. Turski
2/3/2020
Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures
R. Chaudhuri, S. J. Bader, Z. Chen, D. Muller, H. G. Xing, and D. Jena
1/15/2020
GaN/AlN p-channel HFETs with Imax > 420 mA/mm and Similar to 20 GHz fT/fMAX in IEEE International Electron Devices Meeting (IEDM)
1/1/2020
Nitride LEDs and Lasers with Buried Tunnel Junctions
H. Turski, M. Siekacz, G. Muzioł, M. Hajdel, S. Stańczyk, M. Żak, M. Chlipała, C. Skierbiszewski, S. Bharadwaj, H. G. Xing, and D. Jena
12/5/2019
Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
R. L. Xu, M. Muñoz Rojo, S. M. Islam, A. Sood, B. Vareskic, A. Katre, N. Mingo, K. E. Goodson, H. G. Xing, D. Jena, and E. Pop
11/12/2019
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
R. Chaudhuri, S. J. Bader, Z. Chen, D. A. Muller, H. G. Xing, and D. Jena
9/27/2019
Hole mobility of strained GaN from first principles
S. Poncé, D. Jena, and F. Giustino
8/29/2019
Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface
H. Turski, F. Krzyżewski, A. Feduniewicz-Żmuda, P. Wolny, M. Siekacz, G. Muziol, C. Cheze, K. Nowakowski-Szukudlarek, H. (. Xing, D. Jena, M. Załuska-Kotur, and C. Skierbiszewski
8/1/2019
Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas
S. J. Bader, R. Chaudhuri, M. F. Schubert, H. W. Then, H. G. Xing, and D. Jena
6/24/2019
Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy
R. Page, J. Casamento, Y. Cho, S. Rouvimov, H. G. Xing, and D. Jena
6/4/2019
Blue (In,Ga)N light-emitting diodes with buried n +p + tunnel junctions by plasma-assisted molecular beam epitaxy
Y. Cho, S. Bharadwaj, Z. Hu, K. Nomoto, U. Jahn, H. G. Xing, and D. Jena
5/31/2019
The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system
D. Jena, R. Page, J. Casamento, P. Dang, J. Singhal, Z. Zhang, J. Wright, G. Khalsa, Y. Cho, and H. G. Xing
5/17/2019
Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas
A. S. Yalamarthy, M. Muñoz Rojo, A. Bruefach, D. Boone, K. M. Dowling, P. F. Satterthwaite, D. Goldhaber-Gordon, E. Pop, and D. G. Senesky
5/15/2019
Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N
S. Bharadwaj, S. M. Islam, K. Nomoto, V. Protasenko, A. Chaney, H. (. Xing, and D. Jena
3/18/2019
Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures
J. Encomendero, V. Protasenko, B. Sensale-Rodriguez, P. Fay, F. Rana, D. Jena, and H. G. Xing
3/13/2019
Rutile GeO2: An ultrawide-band-gap semiconductor with ambipolar doping
S. Chae, J. Lee, K. A. Mengle, J. T. Heron, and E. Kioupakis
3/11/2019
New physics in GaN resonant tunneling diodes
G. Xing, J. Encomendero, and D. Jena
3/1/2019
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
S. J. Bader, R. Chaudhuri, K. Nomoto, A. Hickman, Z. Chen, H. W. Then, D. A. Muller, H. G. Xing, and D. Jena
12/1/2018
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
W. Li, Z. Hu, K. Nomoto, Z. Zhang, J. Hsu, Q. T. Thieu, K. Sasaki, A. Kuramata, D. Jena, and H. G. Xing
11/12/2018
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
Z. Hu, K. Nomoto, W. Li, Z. Zhang, N. Tanen, Q. T. Thieu, K. Sasaki, A. Kuramata, T. Nakamura, D. Jena, and H. G. Xing
9/17/2018
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
Z. Hu, K. Nomoto, W. Li, N. Tanen, K. Sasaki, A. Kuramata, T. Nakamura, D. Jena, and H. G. Xing
6/1/2018
Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering
A. S. Yalamarthy, H. So, M. Muñoz Rojo, A. J. Suria, X. Xu, E. Pop, and D. G. Senesky
3/30/2018
Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
J. Encomendero, R. Yan, A. Verma, S. M. Islam, V. Protasenko, S. Rouvimov, P. Fay, D. Jena, and H. G. Xing
3/5/2018
234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes
C. Liu, Y. K. Ooi, S. M. Islam, H. (. Xing, D. Jena, and J. Zhang
1/1/2018
Spatially Resolved Thermometry of Resistive Memory Devices
E. Yalon, S. Deshmukh, M. Muñoz Rojo, F. Lian, C. M. Neumann, F. Xiong, and E. Pop
11/10/2017
New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes
J. Encomendero, F. A. Faria, S.  . Islam, V. Protasenko, S. Rouvimov, B. Sensale-Rodriguez, P. Fay, D. Jena, and H. G. Xing
10/23/2017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E. Yalon, B. Aslan, K. K. H. Smithe, C. J. McClellan, S. V. Suryavanshi, F. Xiong, A. Sood, C. M. Neumann, X. Xu, K. E. Goodson, T. F. Heinz, and E. Pop
10/20/2017
Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
S. M. Islam, V. Protasenko, K. Lee, S. Rouvimov, J. Verma, H. (. Xing, and D. Jena
8/28/2017
Effect of oxygen vacancies and strain on the phonon spectrum of HfO2 thin films
L. Gao, E. Yalon, A. R. Chew, S. Deshmukh, A. Salleo, E. Pop, and A. A. Demkov
6/8/2017
Energy Dissipation in Monolayer MoS2 Electronics
4/1/2017
Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes
C. Liu, Y. K. Ooi, S. M. Islam, J. Verma, H. (. Xing, D. Jena, and J. Zhang
2/13/2017
Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3
L. Zhang, A. Verma, H. (. Xing, and D. Jena
2/9/2017
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M. Qi, G. Li, S. Ganguly, P. Zhao, X. Yan, J. Verma, B. Song, M. Zhu, K. Nomoto, H. (. Xing, and D. Jena
2/6/2017
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
S. M. Islam, K. Lee, J. Verma, V. Protasenko, S. Rouvimov, S. Bharadwaj, H. (Grace) Xing, and D. Jena
1/23/2017
Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures
D. Bayerl, S. Islam, C. M. Jones, V. Protasenko, D. Jena, and E. Kioupakis
12/12/2016
Intrinsic electron mobility limits in β-Ga2O3
N. Ma, N. Tanen, A. Verma, Z. Guo, T. Luo, H. (. Xing, and D. Jena
11/21/2016
First-principles calculations of the near-edge optical properties of β-Ga2O3
K. A. Mengle, G. Shi, D. Bayerl, and E. Kioupakis
11/21/2016
High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
M. J. Mleczko, R. L. Xu, K. Okabe, H. Kuo, I. R. Fisher, H. -. P. Wong, Y. Nishi, and E. Pop
7/28/2016
Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski–Krastanov mode
S. Islam, V. Protasenko, S. Rouvimov, H. (. Xing, and D. Jena
4/25/2016

View All Publications

Research Highlights

Extreme Quantum Confinement Heterostructures
D. Bayerl, S. Islam, C. M. Jones, V. Protasenko, D. Jena, and E. Kioupakis
12/1/2016