A Simple and Robust Approach to Reducing Contact Resistance in Organic Transistors
- Contact effects limit device performance, even in the case of high-mobility semiconductors (Fig. 1)
- We developed a strategy for drastically reducing contact effects: it consists in creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection.
- The domain size was controlled by modifying the deposition rate of the device electrodes. Consequently, the charge carrier mobility increased (Fig.1), resulting to values as high as 20 cm2/Vs (Fig.2), with nearly ideal current-voltage characteristics.
- The use of this method has led to accurate measurement of the charge carrier mobility, a critical step in a rational material design.
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