Accelerated Discovery of Artificial Multiferroics with Enhanced Magnetoelectric Coupling
Developing new materials lays the foundation for technology innovations. When one material is integrated with another, new properties and functionalities can emerge in the resulting heterostructure. The choice of building blocks, however, is a challenge that is best addressed with a collaborative approach combining computational methods, material synthesis, and a broad range of characterization methods. This research will tackle a long-standing material science challenge: how to create multiferroics materials that combine long-range electric and magnetic orders. Artificial multiferroics consisting of layered magnetic two-dimensional (2D) materials interfaced with ferroelectric 2D or oxides materials will be investigated. Because the interface between the electrically ordered (ferroelectric) layer and magnetically ordered (e.g., ferromagnetic) layer is atomically flat, an enhanced coupling between the two can be used to effectively switch the magnetic order via the electrical control. These new materials can lead to technological innovations, e.g., memory devices that are compact and power-saving. Given the large number of possible choices of 2D materials, machine-learning based data mining will lead the experimental effort in synthesis and characterization of new multiferroic heterostructures in this research.
Publications
Electrostatic moiré potential from twisted hexagonal boron nitride layers
D. S. Kim, R. C. Dominguez, R. Mayorga-Luna, D. Ye, J. Embley, T. Tan, Y. Ni, Z. Liu, M. Ford, F. Y. Gao, S. Arash, K. Watanabe, T. Taniguchi, S. Kim, C. Shih, K. Lai, W. Yao, L. Yang, X. Li, and Y. Miyahara
8/10/2023
Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP2S6via Ferroelectric Oxide
K. Wang, D. Li, J. Wang, Y. Hao, H. Anderson, L. Yang, and X. Hong
8/8/2023
2D Piezoelectrics, pyroelectrics, and ferroelectrics
W. Zhu, X. Hong, P. D. Ye, and Y. Gu
3/28/2023
Anisotropic Excitons Reveal Local Spin Chain Directions in a van der Waals Antiferromagnet
D. S. Kim, D. Huang, C. Guo, K. Li, D. Rocca, F. Y. Gao, J. Choe, D. Lujan, T. Wu, K. Lin, E. Baldini, L. Yang, S. Sharma, R. Kalaivanan, R. Sankar, S. Lee, Y. Ping, and X. Li
3/23/2023
Ferroelectric Domain Control of Nonlinear Light Polarization in MoS2 via PbZr0.2Ti0.8O3 Thin Films and Free‐Standing Membranes
D. Li, X. Huang, Q. Wu, L. Zhang, Y. Lu, and X. Hong
12/30/2022
Physical Vapor Transport Growth of Antiferromagnetic CrCl3 Flakes Down to Monolayer Thickness
J. Wang, Z. Ahmadi, D. Lujan, J. Choe, T. Taniguchi, K. Watanabe, X. Li, J. E. Shield, and X. Hong
12/1/2022
Spontaneous polarization in van der Waals materials: Two-dimensional ferroelectrics and device applications
K. Lai
9/26/2022
Electric field tuning of magnetic states in single magnetic molecules
Y. Lu, Y. Wang, L. Zhu, L. Yang, and L. Wang
8/2/2022
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